发明名称 Method of making a silicon based biomedical sensor
摘要 A sensor 20 is formed on semiconductor substrate 22. Dielectric layers 23 and 24 are formed on the face and backside of substrate 22, respectively. Metal leads 26 and 28 contact the substrate through openings in the dielectric layer 23. The leads 26 and 28 are also connected to the set of interleaved longitudinal contact fingers 27 and 29. Additionally, a pair of backside contacts 30 and 32 are formed on the dielectric layer 24. The backside contact 30 is in contact only with the metal lead 26 through a conductive region 34.
申请公布号 US5693577(A) 申请公布日期 1997.12.02
申请号 US19960632032 申请日期 1996.04.12
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 KRENIK, WILLIAM R.;APPLETON, MARK
分类号 G01N27/12;(IPC1-7):H01L21/22 主分类号 G01N27/12
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