发明名称 PATTERN FORMING METHOD
摘要 PROBLEM TO BE SOLVED: To prevent swelling of a sililated layer and to form a pattern with good accuracy by applying an org. material to form a first layer on a layer to be processed and then applying a material which can be changed into an org. metal thereon. SOLUTION: First, an org. material is applied to form a first layer on a layer to be processed (step 1). Then a material which can be made into an org. metal is applied on the first layer to form a second layer having 30 to 100nm thickness (step 2). The org. metal means a metal bonded to carbon, and the metal includes silicon. Then a part which can not be made into the org. metal is selectively formed in the second layer (step 3). A part other than the part which can not be made into the org. metal, namely, the part other than the selected part in the step 3 is made into the org. metal (step 7). Finally, the part which can not be made into the org. metal and the part of the first layer under the part which can not be made into the org. metal are removed (step 8).
申请公布号 JPH09311461(A) 申请公布日期 1997.12.02
申请号 JP19960123561 申请日期 1996.05.17
申请人 MITSUBISHI ELECTRIC CORP 发明人 KISHIMURA SHINJI
分类号 G03F7/105;G03F7/09;G03F7/26;G03F7/38;H01L21/027;(IPC1-7):G03F7/38 主分类号 G03F7/105
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