SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

摘要

PROBLEM TO BE SOLVED: To obtain a stable high-reliability capacitor by heat treating a dielectric film between a first and a second electrodes made of a conductive film and dielectric film having an electric flux density-electrolytic strength characteristic showing a hysteresis into a film involving a reformed film having no hysteresis. SOLUTION: 1) A Pt film is formed on a Si substrate 302 by the DC sputtering to form lower electrodes 302. 2) A material soln. is spin-coated on the whole surface by the sol-gel method to form an amorphous film 401 having a ferroelectric compsn. 3) It is dried to remove the solvent from this film 401 and the film 401 is rapidly heated to crystallize it to form a PZT film 403. 4) After forming a Pt film, upper electrodes 501 are formed and this film 403 is reformed in a N atmosphere by a second heat treatment to form a reformed PZT film 601. This eliminates the operation instability of a capacitor due to the ferroelectric property to thereby reduce the leak current.