| 摘要 |
A fabrication method for a capacitor of a stack-type DRAM cell includes forming a first insulating film, an anti-etching film, and a first conductive film on a substrate by which a switching transistor and a bit line previously are buried, forming a patterned second insulating film on the first conductive film, forming a second conductive film on the first conductive film having the patterned second insulating film thereon, dry-etching the first and second conductive film to expose a portion of the surface of the anti-etching film therethrough, forming a contact hole by etching the exposed surface of the anti-etching film and the first insulating film therebeneath, forming a third conductive film over the surfaces of the first and the second conductive films, including the contact hole therebetween, forming a planarized fourth insulating film over the third conductive film, etching the fourth insulating film to expose a portion of the surface of the anti-etching film above the bit line and then etching the third and the first conductive films, forming sidewalls composed of a fourth conductive film and forming a node electrode composed of the first through fourth conductive films.
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