发明名称 Method of fabricating a semiconductor device
摘要 The invention provides a method of fabricating a semiconductor device, including the steps of forming a plurality of active regions on a semiconductor substrate, covering a first active region with mask layers including a first mask layer and a second mask layer deposited on the first mask layer, implanting first electrically conductive type impurities into a second active region with the mask layers acting as a mask, removing the second mask layer, and implanting second electrically conductive type impurities into the first and second active regions. The method makes it possible to form a retrograde-distributed tripe well with less number of masks and less number of ion implantation than conventional methods.
申请公布号 US5693505(A) 申请公布日期 1997.12.02
申请号 US19940355905 申请日期 1994.12.14
申请人 NEC CORPORATION 发明人 KOBAYASHI, MIGAKU
分类号 H01L21/74;H01L21/8238;H01L27/08;H01L27/092;(IPC1-7):H01L21/266 主分类号 H01L21/74
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