| 摘要 |
PROBLEM TO BE SOLVED: To provide an electrode material which is doped with p-type impurity and obtains good ohmic contact for a III-V compound semiconductor, and an electrode using this material, thus enabling reduction in driving voltage of a device using this compound semiconductor. SOLUTION: [1] This material is expressed by a general formula, Inx Gay Alz N (where x+y+z=1, 0<=x<=1, 0<=y<=1, 0<=z<=1), doped with p-type impurity for a III-V compound semiconductor. In this case, this material is metal containing at least Ca and a precious metal, and the total weight of Ca and the precious metal is not less than 50% and not more than 100% of the weight of the whole electrode material. [2] Also, an electrode using this material is expressed by a general formula, Inx Gay Alz N (where x+y+z=1, 0<=x<=1, 0<=y<=1, 0<=z<=1), doped with p-type impurity for a III-V compound semiconductor. In this case, this electrode is formed on the compound semiconductor, by using the electrode material of [1]. |
