| 摘要 |
A silicon carbide trench MOSFET is provided that includes a first conductivity type semiconductor substrate made of silicon carbide. A first conductivity type drift layer and a second conductivity type base layer, both made of silicon carbide, are sequentially formed by epitaxial growth on the semiconductor substrate. The first conductivity type drift layer has a lower impurity concentration than the semiconductor substrate. A first conductivity type source region is formed in a part of a surface layer of the second conductivity type base layer. A gate electrode is received through an insulating film, in a first trench extending from a surface of the first conductivity type source region to reach the first conductivity type drift layer. A Schottky electrode disposed on an inner surface of a second trench having a greater depth than the first trench.
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