发明名称 |
Method for fabricating BiCMOS device |
摘要 |
A method for fabricating a bipolar complementary metal oxide semiconductor device, includes a first step of forming a three-layered substrate of p-/n+/n- type or n-/p+/p- type and forming p- and n-wells to be adjacent to each other to the bottom of the top layer of the three-layered substrate; a second step of isolating the p- and n-wells from each other and defining a region for a bipolar transistor on one side to separate base/emitter regions from each other; a third step of defining a gate region to form a metal- oxide semiconductor transistor in each of the p- and n-wells and forming collector/emitter regions in the bipolar transistor region; and a fourth step of forming an n-type metal oxide semiconductor transistor, a p-type metal oxide semiconductor transistor and a bipolar transistor on the p-well, n-well and collector/emitter regions, respectively, and forming source/drain and base electrodes through diffusion by using a doped polycrystalline silicon sidewall spacer.
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申请公布号 |
US5693555(A) |
申请公布日期 |
1997.12.02 |
申请号 |
US19960670756 |
申请日期 |
1996.06.21 |
申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
KIM, KWANG-SOO;KIM, CHEON-SOO;BAEK, KYU-HA;KIM, BO-WOO |
分类号 |
H01L21/8249;H01L27/06;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/8249 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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