| 摘要 |
PCT No. PCT/AT95/00004 Sec. 371 Date Sep. 3, 1996 Sec. 102(e) Date Sep. 3, 1996 PCT Filed Jan. 12, 1995 PCT Pub. No. WO95/19640 PCT Pub. Date Jul. 20, 1995A charged particle, in particular ion projector system, has a mask arranged in the path of the charged particle beam and provided with transparent spots, in particular openings, arranged asymmetrically to the optical axis, which are reproduced on a wafer by means of lenses arranged in the path of the charged particle beam. The charged particle beam has at least one cross-over (crosses the optical axis at least once) between the mask and the wafer. Charged particles with an opposite charge to the charge of the reproduction particles are supplied into the path of the reproduction charged particle beam in a defined area located between the mask and the wafer. The limits that define said area are selected in such a way that the absolute value of the integral effect of the space charge on the particles that reproduce the mask structures is as high upstream of said area (seen in the direction of radiation) as the absolute value of the integral effect of the space charge downstream of said area.
|
