| 摘要 |
PROBLEM TO BE SOLVED: To enable the control of a single electron level, including the thin line region and microbox region by forming microbox regions formed on a length part of the thin line region on an insulation film formed on a length part of the thin line region. SOLUTION: By using as a mask a resist pattern 9 extending perpendicularly to the length of a thin linear pattern 8, a SiO2 film 6a is patterned into a thin linear pattern and etched. A polysilicon film 5a formed into a thin linear pattern is etched. A silicon film 3a formed into a thin linear pattern and a polysilicon film 5b formed into a thin linear pattern are etched in the side direction from the side faces to thereby reduce the width of this film 3a, thus forming a quantum thin line 3b of about 30nm wide and reducing the plan shape of the polysilicon film 5b to obtain a quantum box 5c of about 30nm in side length. The position of a microbox region about the length direction of the quantum thin line is determined by the positioning at the time of forming of the resist pattern 9.
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