发明名称 |
Non-volatile ferroelectric memory device equipped with reference voltage generator for exactly regulating reference voltage to the mid point between two logic level and method of reading out data bit therefrom |
摘要 |
A non-volatile ferroelectric memory cell supplies electric charge from the ferroelectric capacitor to one of bit lines so as to rise the bit line to one of a first potential level representative of logic "1" level and a second potential level representative of logic "0" level, and a reference voltage generator generates a reference voltage level exactly adjusted to the mid point between the first potential level and the second potential level by supplying electric charge from a dummy memory cell storing a dummy data bit of logic "1" level and another dummy memory cell storing a dummy data bit of logic "0" level to the other of the bit lines and an adjacent bit line.
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申请公布号 |
US5694353(A) |
申请公布日期 |
1997.12.02 |
申请号 |
US19960718828 |
申请日期 |
1996.09.24 |
申请人 |
NEC CORPORATION |
发明人 |
KOIKE, HIROKI |
分类号 |
G11C14/00;G11C11/22;H01L21/8242;H01L21/8246;H01L27/10;H01L27/105;H01L27/108;(IPC1-7):G11C11/22 |
主分类号 |
G11C14/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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