| 发明名称 |
Process for the laminar joining of silicon semiconductor slices |
| 摘要 |
A process for the laminar joining of two or more silicon semiconductor slices (wafers) under the effect of pressure and heat, in which a thin layer of a semiconductor-compatible material is applied to at least one of the surfaces to be joined.
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| 申请公布号 |
US5693574(A) |
申请公布日期 |
1997.12.02 |
| 申请号 |
US19940192329 |
申请日期 |
1994.02.04 |
| 申请人 |
DEUTSCHE AEROSPACE AG |
发明人 |
SCHUSTER, GUENTHER;PAENITSCH, KLAUS |
| 分类号 |
H01L21/98;(IPC1-7):H01L21/603 |
主分类号 |
H01L21/98 |
| 代理机构 |
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