| 摘要 |
PROBLEM TO BE SOLVED: To obtain a method for manufacturing a semiconductor element capable of being disordered in only a super-lattice layer at a desired location with precision by a relatively simple process in which the entire is in a heating furnace, etc., without heating for a long period. SOLUTION: Only a region where a semiconductor laminated material 21 is disordered is heated in a short time without using a dielectric film, etc., For this reason, a light irradiation from a light source 25 having a shorter wavelength than the maximum band gap wavelength of a semiconductor super- lattice structure which is desired to establish non-order and a longer wavelength than a band gap wavelength of the other semiconductor layers stacking this semiconductor super-lattice structure is used. A shield plate 22 for shielding partially the light irradiation is arranged between light passages of a heating light source 25 and a semiconductor laminated material 21. |
