| 摘要 |
PROBLEM TO BE SOLVED: To shield light, which reflects from the rear side of a substrate to an active layer, with a light-shielding film even if there is the light and to prevent reflected light from penetrating into the active layer by a method wherein the light-shielding film is formed between at least the active layer on the substrate and the substrate. SOLUTION: A semiconductor device 1 is one formed into a structure, wherein an active layer 3 consisting of a polycrystalline silicon layer or the like is formed on an insulative substrate 2, such as a quartz glass substrate, a gate layer G is formed on the layer 3 via a prescribed insulating layer and a source layer S and a drain electrode D are respectively formed on both sides of the layer G, and a light-shielding film 4 is mainly provided between at least the layer 3 on the substrate 2 and the substrate 2. As this film 4, a ceramic film, an aluminium nitride film, a silicon carbide film, an opaque crystalline glass film or the like, for example, is applied. Accordingly, a light leakage current due to reflected light from the rear of the substrate is not generated, a reduction in a contrast in a liquid crystal display device can be inhibited and a picture quality can be enhanced.
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