| 摘要 |
PROBLEM TO BE SOLVED: To adjust the quantity of transmitted light of light transmitting areas different in phase of transmitted light from each other uniform by providing a transparent substrate, specified silicon nitride film and silicon oxide film, and a shielding film for covering the main surface of the transparent substrate in the shielding area. SOLUTION: A silicon nitride film 3 and a silicon oxide film 5 are formed in layers in such a manner as to a first light transmitting area Ta on a transparent substrate 1 and expose a second light transmitting area Tn. A shielding film 7 is formed in such a manner as to cover a shielding area S on the transparent substrate 1 and expose the first and second light transmitting areas Ta, Tn. In the case of using i-ray (wavelength; 365nm) as exposure light, it is preferable that the film thickness tN of the silicon nitride film 3 is 1570+47Å, and the film thickness tO of the silicon oxide film 5 is 240+108Å. The quantity (intensity) of each transmitted light can be controlled to be substantially same by thus setting the film thickness of each film 3, 5. |
