发明名称 ION GENERATING DEVICE FOR SEMICONDUCTOR ION IMPLANTATION EQUIPMENT
摘要 <p>PROBLEM TO BE SOLVED: To enhance efficiency of ion generation, stably operate an equipment, and improve productivity, by suppressing generation of thermion, not contributing to ionization reaction and emitted by a large amount from a filament part in the vicinity of a through hole of a base plate inserted to a filament. SOLUTION: This device is constituted by an arc chamber 11 comprising a front plate 13, side plate 14 and a base plate 15 to form an ion reaction chamber 12, filament 16 inserting both end parts in a through hole 15a of the base plate 15 to be provided in the arc chamber 11 to emit a thermion and a filament connector load 17 provided in a lower part of the base plate 15 to connect both end parts of the filament 16. Here, an insulating member 18 is inserted to the through hole 15a of the base plate 15, to be set up, the filament 16 and the base plate 15 are insulated.</p>
申请公布号 JPH09306372(A) 申请公布日期 1997.11.28
申请号 JP19960239089 申请日期 1996.09.10
申请人 SAMSUNG ELECTRON CO LTD 发明人 KIN GENCHIYUU;KANEMOTO HISASHI;KIN TOUSHIYOKU;CHIYOU KOURAI
分类号 C23C14/48;H01J27/08;H01J37/08;H01J37/317;H01L21/265;(IPC1-7):H01J27/08 主分类号 C23C14/48
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