| 摘要 |
PROBLEM TO BE SOLVED: To reduce penetrating dislocation density generated in an HgCdTe photoelectric conversion layer which is grown on a dissimilar substrate such as a silicon substrate. SOLUTION: In this infrared ray detecting equipment, a CdTe intermediate layer 2, an HgTe very thin layer 3, an HgCdTe dislocation relieving layer 4 and an HgCdTe photoelectric conversion layer 5 are laminated in order on a substrate 1 composed of one out of silicon, GaAs, GaAs/silicon, and sapphire. Cd composition of the HgCdTe dislocation relieving layer 4 is set in the middle of Cd compositions of the CdTe middle layer 2 and the HgCdTe photoelectric conversion layer 5. The inclinationθfrom 111} face of the respective layers 2-5 is set as 0 deg.<=θ<=6 deg..
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