| 摘要 |
PROBLEM TO BE SOLVED: To make it possible to obtain normal infrared spectral characteristics and a full photocurrent by a method wherein the degree of the composition gradient in the thickness direction of a specified epitaxially grown layer is made so high that an electric field due to a difference between the forbidden band widths of the layer, which are generated by the composition gradient, works dominantly rather than diffusion to a minority carrier transfer. SOLUTION: A composition gradient depends upon a growth starting temperature and a cooling-down rate and in the case where the cooling-down rate is 0.05 deg.C/minute, the growth starting temperature is set at 467 deg.C or lower. In the case where the growth starting temperature is high, the cooling-down rate is set at 0.13 deg.C/minute or higher. By making lower the temperature and by increasing higher the rate an Hg1-x Cdx Te liquid phase epitaxially grown layer 2 having a larger composition gradient is obtained. The degree of the composition gradient in the thickness direction of the layer 2 is set as a magnitude, in which an electric field due to a difference between the forbidden band widths of the layer 2, which are generated by the composition gradient, works dominantly rather than diffusion to a minority carrier transfer. For example, the magnitude is set in 0.0027μm<-1> or higher, to detect normal infrared spectral characteristics and a full photocurrent from an infrared detecting device.
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