THIN FILM SEMICONDUCTOR AND ITS MANUFACTURE

摘要

PROBLEM TO BE SOLVED: To provide a thin film silicon semiconductor, which is formed on a board made of an insulating material such as glass and has a high quality with low resistance usable as an electrode, and a method for manufacturing the semiconductor at a low temperature with a simple process. SOLUTION: A thin film silicon semiconductor is formed on an insulating board, with a carrier concentration of 1×10<20> cm<-3> or more. The thin film silicon semiconductor is obtained through a process of forming an amorphous silicon thin film, which contains dopant atoms, on the insulating board by CVD method and a process of irradiating the thin film with pulse laser.