| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a cell which maintains a stable operation and is suitable for high integration by providing the cell with a first conductive layer for the floating gate formed on a tunnel insulating film, a second conductive layer formed on the first conductive layer and a third conductive layer for a control gate. SOLUTION: A flash memory device is provided with a P type semiconductor substrate 100, a field insulating layer 160 and a first conductive layer for the floating gate formed on a tunnel insulating film. The device is also provided with a buried insulating layer 270 and a buried junction layer 280, which is formed to make contact with the bottom and the side wall of the buried insulating layer 270 to be used as a source/drain area. Furthermore, the device is provided with a second conductive layer, which is formed on the first conductive layer to be used as the floating gate, being connected to the first conductive layer, an insulating layer formed on the second conductive layer and a third conductive layer 320 for the control gate formed on the insulating layer. Thus, stable operation is maintained and high integration is achieved.</p> |
