发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURE THEREOF
摘要 <p>PROBLEM TO BE SOLVED: To provide a high-yield and high-reliability semiconductor integrated circuit device easy to mount by forming it as an integrated circuit substrate, without dicing a substrate formed by slicing a Si single crystalline rod. SOLUTION: An integrated circuit substrate is formed by slicing a Si single crystalline rod having an outline shape with leaving this shape uncut. Elements such as transistors and wirings, etc., are formed on this Si substrate 10, electrode pads P1 are arrayed along the marginal edge of the element forming surface and large electrode pad P0 is formed at the center. This pad P0 is electrically connected to a wiring pattern 11 on the back surface and element regions through high-concn. diffused regions 15 extending in the thickness direction of the substrate. The pads Pi are connected to solder balls S1 to be connectable to external circuits.</p>
申请公布号 JPH09307013(A) 申请公布日期 1997.11.28
申请号 JP19960116665 申请日期 1996.05.10
申请人 MITSUI HIGH TEC INC 发明人 MITSUI TAKAAKI;NAGATA SATOSHI
分类号 H01L29/84;H01L21/321;H01L21/60;H01L23/02;H01L23/48;(IPC1-7):H01L23/02 主分类号 H01L29/84
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