| 摘要 |
PROBLEM TO BE SOLVED: To suppress the resistance of a laminated wiring having a main Al or Al alloy conductive film from increasing due to heating for alloying acceleration and prevent voids from being produced and growing in a monolayer wiring when forming the wiring adaptable for fine patterns and thin films used for semiconductor integrated circuit devices. SOLUTION: The process comprises the steps of forming wiring metal films 15q, 16, 15b on an insulation film 12, pattering these films 15a, 16, 15b to form a wiring 17, and forming an insulation film 18 covering the wiring 17. Before the patterning step of the films 15a, 16, 15b these films are heat-treated at a lower temp. rise rate than that due to the heat applied after these steps.
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