SI TRANSISTOR INCORPORATING PARTIAL MATCHING CIRCUIT

摘要

PROBLEM TO BE SOLVED: To provide a Si transistor in which a circuit for partial matching is provided on a transistor element on the Si substrate to obtain stable properties of the element. SOLUTION: A transistor is provided with a gate (base) conductor leader line 102 whose length is determined so that the impedance may be inductive at frequency on use when the Si transistor side is seen from a gate (base) electrode 105. A MIM capacitor composing inter-layer insulating film 104 for the capacitor and a lower electrode 103 is formed just under the gate (base) electrode 105 of the transistor as an upper electrode. The lower electrode 103 is connected to a ground on the back of the Si substrate through an area 106 with high density of impurities. Partial matching is obtained without using a bonding wire.