| 摘要 |
PROBLEM TO BE SOLVED: To etch an antireflective film used as a base layer, without deforming a resist mask. SOLUTION: A soln. prepared by dissolving an antireflective film material in an org. solvent is applied on an oxide film 1 formed on a wafer W by a spin coater, etc., and baked to form an antireflective film 2. A resist liq. is applied on this film 2 and dried to form a resist film 3, the film 3 is exposed through a film to specified pattern light, the pattern is developed with an org. alkali water soln. such as 1-10wt.% tetraammonium hydroxide water soln. to obtain a resist mask 4, and the oxide film 1 is plasma-etched with an etchant of N2 through the resist mask 4 to remove undesired part of the antireflective film 2. |
