| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a resist pattern and a developing apparatus which are capable of good resist patterning without increasing the installation cost and without decreasing the throughput in a resist process using an antireflection coating. SOLUTION: This method for manufacturing a semiconductor device includes a process for rotating a wafer, on whose surface a resist film is formed and an antireflection coating is formed on that resist film, and at the same time dissolving and removing this antireflection coating by dripping treatment solution for dissolving the antireflection coating on the surface of thereof, and a process for carrying out a developing treatment of this resist film after this antireflection coating removing treatment. This developing apparatus comprises a nozzle 4 in which holes for dripping the treatment solution and holes for dripping the developing solution for the resist film are alternately provided. |
