| 摘要 |
PROBLEM TO BE SOLVED: To realize high precise and effective implantaion treatment of impurity ions to a semiconductor thin film. SOLUTION: Ions are implanted in a semiconductor thin film 2 with dosage less than 1×10<13> /cm<2> , while a first ion beam is scanned by using an ion implantation equipment having a mass separater and a magnetic field deflector, the impurity concentration of a channel region Ch is adjusted, and Vth (threshold voltage) of a TFT (thin film transistor) is previously controlled. Ions are implanted in the semiconductor thin film 2 with dosage less than 1×10<14> /cm<2> , while a second ion beam is scanned by using the same ion implantation equipment, and an LDD (low concentration impurity) region of the TFT is formed. Ions are implanted in the semiconductor thin film 2 with dosage greater than or equal to 1×10<14> /cm<2> without scanning ion shower, by using an ion doping equipment which is not provided with a mass separater, and a source region S and a drain region D of the TFT are formed.
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