| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device having a step of forming a resistor part which can be precisely adjusted to a desired resistance and is adaptable to mass production. SOLUTION: A semiconductor area 12 for a resistor part is formed on a semiconductor substrate 10 or in a surface layer of the semiconductor substrate 10 so that its resistance may be higher than a desired resistance of the resistor part to be formed. Then, metallic electrodes 15 to be connected to the semiconductor area 12 are formed. The electrodes 15 and the semiconductor area 12 are heated to 300 deg.C or more to diffuse metal of the electrodes 15 in the semiconductor area 12 and the resistance of the semiconductor area 12 is adjusted to the desired value.</p> |
