| 摘要 |
PROBLEM TO BE SOLVED: To provide a novel semiconductor device and a method of fabricating the same which can achieve both of two different purposes of higher integration of memory cells and improvement in fabricating performance by reducing level differences. SOLUTION: A cell transistor 90 on the NAND side and a cell transistor 100 on the NOR side mixedly exist in a memory cell region 110 on a semiconductor substrate and channels 91 and 101 of the cell transistors 90 and 100 are arranged so as to be in contact with each other. The channel 91 of the cell transistor 90 on the NAND side serves as the source and drain of a cell transistor 101 on the NOR side. |
