| 摘要 |
PROBLEM TO BE SOLVED: To make it possible to improve the polarizing characteristics of a ferroelectric capacitor element, to reduce the leakage current of the element and to improve the dielectric breakdown voltage by forming the structure of a protective film covering the element in two layers, and forming the upper layer film as an Si oxide film with TEOS as a material with ozone used as an oxidizer. SOLUTION: In a capacitor element (ferroelectric capacitor element) using capacitor protective films 10, 11 having a ferroelectric unit 8 sandwiched between electrodes 7 and 9, the films 10, 11 covering in contact with the element are formed in a two-layer structure. The film 10 is formed as a film 10 formed by a sputtering method or a spin-on-glass(SOG) film except a CVD method. An Si oxide film using tetraethyl orthosilicate(TEOS) is formed thereon as the film 11 at the substrate temperature of 350 to 500 deg.C, and then the film 11 is heat treated at a high temperature. Thus, the deterioration of the ferroelectric capacitor film quality due to the reducing reaction is prevented. Further, the increase in the leakage current or the element is suppressed to prevent the decrease in the dielectric withstand voltage. |
