发明名称 METHOD FOR INSPECTING FLAW OF PHOTOMASK AND APPARATUS FOR INSPECTING FLAW OF PATTERN
摘要 PROBLEM TO BE SOLVED: To accurately inspect whether a shift pattern part is formed according to a desired shape with respect to a mask. SOLUTION: A Levenson mask 10 is irradiated with light from a light source 13 and the light passed through the mask 10 is detected by photoelectric converter elements 171 to be photoelectrically converted to be compared with a reference signal based on plan data to inspect the pattern flaw of the mask 10. At this time, a step inserting a polarizer 15 between the light source 13 and the mask 10 and arranging liquid crystal cells 172 each having the same size as a pixel on the light detection surface of respective pixels of the photoelectric converter elements 171 detecting the light passed through the mask 10, a step irradiating the polarizer 15 with the light from the light source 13, a step controlling the polarizing angle of the liquid crystal cells so that light passing quantity becomes max. or min and a step judging whether a pattern flaw is present on the basis of the photoelectric conversion output level of the photoelectric converter elements 171 are provided.
申请公布号 JPH09304290(A) 申请公布日期 1997.11.28
申请号 JP19960121813 申请日期 1996.05.16
申请人 TOSHIBA CORP 发明人 HIRANO TAKASHI
分类号 G01N21/88;G01N21/21;G01N21/93;G01N21/956;G03F1/30;G03F1/84;H01L21/027;H01L21/66 主分类号 G01N21/88
代理机构 代理人
主权项
地址