| 摘要 |
PROBLEM TO BE SOLVED: To minimize the over size of a contact hole against an electrode by composing the surface layer of a sidewall of a membrange having etching resistance against the etchang of a layer insulating film insulating a wiring from a semiconductor substrate. SOLUTION: A silicon oxide film 150nm thick is formed at 800 deg.C or below to be etched back isotropically on the whole surface. Next, a sidewall 17 made of silicon oxide film is formed on the side end of a gate electrode 13 and another electrode 16'. Next, the whole surface is implanted with 4×10<16> ions/cm<2> by implanting energy of 10keV. At this time, silicon atoms of 2×10<22> /cm<3> are increased on the surface layer of an element separating oxide film 13 and the surface layer 20nm of the sidewall 17 so as to form a surface reformed film 18 on the surface of the sidewall 17.
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