| 摘要 |
<p>The present invention is a method for chemical-mechanical planarization of semiconductor wafers that is highly useful for planarizing stop-on-feature design wafers. Initially, the wafer is positioned against a liquid solution over a planarizing surface of a polishing pad. At least one of the wafer or the pad is moved with respect to the other at a relatively low velocity to maintain a substantially continuous film of liquid solution between the wafer and the pad. The temperature of a pad platen is also controlled to maintain a relatively low temperature of the liquid solution at which the solution is highly selective to a layer of material on the wafer.</p> |
