N-Seitige polygonale Zellenanordnung für einen Mehrfachzellentransistor

摘要

A MOS transistor cell is disclosed for a multiple cell MOS transistor, such as in an ESD protection circuit, output buffer, etc. The transistor cell has a regular n-sided polygonal geometry, wherein n>/=8. A drain region is provided in a substrate which occupies an area with n-sided polygonal shaped boundaries. Surrounding the drain, is a channel region which occupies an n-sided polygonal shaped area. Surrounding the channel region is a source region provided in the substrate which occupies an annular shaped area having n-sided polygonal boundaries.