TRANSISTOR HAVING A VERTICAL CHANNEL

摘要

An IGBT of SiC comprises superimposed a drain (1), a highly doped p-type substrate layer (2), a highly doped n-type buffer layer (3), a low doped n-type drift layer (4), a highly doped p-type base layer (5), a highly doped n-type source region layer (6) and source (7). The transistor also comprises a vertical trench (8) extending through the source region layer and the base layer and to the drift layer. It also comprises an additional low doped p-type layer (13) arranged laterally to the base layer, connecting it to an insulating layer (11) and extending vertically at least over the extension of the base layer. A gate electrode (12) is applied on the insulating layer for, upon applying a voltage to the gate electrode, forming a conducting inversion channel at the interface between said additional layer (13) and the insulating layer for electron transport from the source to the drain.