| 摘要 |
An electrostatic wafer-holding chuck (10) includes first (14) and second (20) dielectric plates formed of single crystal aluminum oxide and at least one electrode (16) disposed within a recess (14A) formed within the first dielectric plate (14). The second dielectric plate (20) has a top wafer supporting surface (20A) that has a fluid distribution network (28) formed therein. The fluid distribution network (28) channels a heat transfer medium (22) to the backside of the wafer (W). When the first (14) and second (20) dielectric plates are assembled, the first dielectric plate (14) is disposed contiguous to the second dielectric plate (20) and then are diffusively joined together to form a monolithic, hermetically sealed electrostatic chuck (10).
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