| 摘要 |
<p>A low-pressure processing device for manufacturing semiconductor by etching, ashing and forming CVD thin films with a gas plasma. The processing device has two processing chambers (23) and two load-lock chambers, a first load-lock chamber (21) connected to the processing chambers (23) and a second load-lock chamber (22) connected to the first load-lock chamber (21) for setting the same pressure. In the first load-lock chamber (21), a disk (19) is provided. The disk (19) has a center shaft to which four stage units (30) on which substrates are placed are fixed. As the disk (19) is vertically moved and rotated around the center shaft, the processing chambers (23) and the second load-lock chamber (22) are defined while substrates are transferred. The processing chambers (23) and second load-lock chamber (22) are defined by vertically moving the disk (19) to seal the spaces among the upper lids (24) of the first load-lock chamber (21), the upper lid (25) of the second load-lock chamber (22), and the upper lids (26) of the processing chambers (23).</p> |
