发明名称 Semiconductor module for power IGBT module
摘要 The module includes a package with a resin housing and a metal base-plate (1) to which is soldered a ceramic substrate (4) containing a ceramic plate (4a), while the module comprises several interconnected semiconductor chips. To the top side of the plate is bonded a first Cu foil (4b), while a second Cu foil is bonded to the ceramic plate bottom side. The ceramic substrate is divided into several zones, each locating a semiconductor chip. The first Cu foil comprises several structures, corresponding to the semiconductor chips. Between the zones is formed one or more break lines (7) on the ceramic substrate top side. Alternatively the break line(s) can be formed on the substrate bottom.
申请公布号 DE19721061(A1) 申请公布日期 1997.11.27
申请号 DE1997121061 申请日期 1997.05.20
申请人 FUJI ELECTRIC CO., LTD., KAWASAKI, KANAGAWA, JP 发明人 KOBAYASHI, TAKATOSHI, KAWASAKI, KANAGAWA, JP;YAMADA, TOSHIFUSA, KAWASAKI, KANAGAWA, JP
分类号 C04B37/02;H01L23/13;H01L25/07;H01L25/18;H05K1/02;H05K1/03;H05K1/14;H05K3/00;H05K3/20;H05K3/40;(IPC1-7):H01L25/07;H01L23/498 主分类号 C04B37/02
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