Silicon on insulator substrate for fabricating transistors and method for preparing such a substrate

摘要

The procedure for the preparation of a silicon substrate on an insulator, for the mfr. of transistors, includes shaping the surface of a silicon substrate (10) to define a first region (20) and a second region (22) forming a depression w.r.t. the first region. Within both regions an embedded silicon oxide layer is formed (26) which flows over the boundary between the two regions. The silicon oxide which covers the point where the two regions joint is removed. A further layer of silicon (32) is then formed by epitaxial growth on the first and second regions, and on the transition edge between them. The epitaxial layer (32) is then flattened with a stop layer on the layer of silicon oxide.