High-voltage semiconductor device with control element

摘要

A high breakdown voltage pch-MOSFET (10A) having a breakdown voltage of 150V or more and a control element (30) controlling the same are formed in a common n<->epitaxial layer (3). Only an n-type region of n<-> epitaxial layer (3) is distributed at a region located between the high breakdown voltage pch-MOSFET (10A) and the control element (30) and extending along the substrate surface. A semiconductor device thus formed achieves a good throughput and reduces a required chip area.