APPARATUS AND METHOD FOR DRY ETCHING USING LIGHT AND MICROWAVE

摘要

Disclosed is a dry etching apparatus using light and microwave including a plasma tube(37), a reaction chamber(33), and an investigation device(40). The plasma tube(37) inlet the gas activated by a microwave generation device to the reaction chamber in which a wafer(31) is positioned. The activated gas reacts the wafer(31) placing on a electrode(32) to which a supply voltage is applied in the reaction chamber(33). The surface of the wafer(31) is activated by vertically projecting light to the wafer(31) on the upper part of the chamber(33). Thereby, the investigation device(40) helps to react radical input into the chamber(33) through the plasma tube(37).