| 摘要 |
A photo mask and method for fabricating the same is disclosed. The photo mask and method for fabricating the same comprises a mask substrate(301) for transmitting light, a chrome film(302) for protecting transmission of light, wherein the chrome film is formed on one side of the mask substrate(301). A high reflection film(304) having high reflection ratio, wherein the high reflection film(304) is formed to overlap with the chrome film(302). Thereby, reliability and yield of the semiconductor device is significantly improved by securing enough margin of lithography processing.
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