FABRICATION METHOD OF GATE ELECTROD OF SEMICONDUCTOR DEVICE

摘要

The method for forming transistor having gate electrode which threshold value is less than one of mask for gate electrode include steps: a) forming doped polysilicon and nitride layers on substrate after forming field and gate oxide layers; b) forming a 1st nitride pattern with dry etching process; c) forming polysilicon pattern by patterning the polysilicon layer with dry wet etching process; d) injecting N+ ion into source and drain regions after forming a 2nd nitride pattern; e) removing 2nd nitride pattern after leaving low temp. oxide layer on both side of polysilicon pattern; f) forming metal layer on the polysilicon pattern, source and drain regions, and removing non active metal layer; g) forming gate electrode by etching the exposed region of the polysilicon pattern ; and g) injecting N- ion on the electrode.