Method and apparatus of redundancy for non-volatile memory integrated circuits

摘要

A redundancy circuit used in a non-volatile memory chip to increase the production yield due to manufacturing defects. The redundancy circuit includes a redundancy 'predecoder circuit, a source follower EEPROM (electrically erasable programmable read only memory) memory fuse, a scheme to use the column high voltage drivers (also known as page latch) to program the EEPROM fuses, a scheme to use the regular row decoder (also known as wordline driver or x-decoder) as the redundancy row decoder, and an out-of-bound address as a redundancy enable/disable signal.