| 摘要 |
<p>A semiconductor storage device has a read route which is formed from a first read bus pair (RBUS1T and RBUS1N) connected to a plurality of sense amplifiers (10), to which a bit line pair (DT and DN) is inputted, and inputted to a first data amplifier (20), a second read bus pair (RBUS2T and RBUS2N) connected to the first data amplifier (20) connected to the sense amplifiers (10), to which the bit line pair (DT and DN) is inputted, and also to a precharge circuit (30) and inputted to a second data amplifier (40), a third read bus (RBUS3T and RBUS3N) outputted from the second data amplifier (40) and inputted to a data output buffer (50), and a bus extending from the data output buffer (50) to an output terminal (DOUT). The precharge circuit (30) is connected to the second read buses (RBUS2T and RBUS2N) in the proximity of the first data amplifier (20B) connected to the second read buses (RBUS2T and RBUS2N) at a position remote from the connection points between the second data amplifier (40) and the second read buses (RBUS2T and RBUS2N). <IMAGE></p> |
