Method for manufacturing a wiring contact portion of a semiconductor device

摘要

The invention provides a device having a semiconductor layer (11), an insulating layer (13) on the semiconductor layer (11), including a discontinuity therein, a monocrystalline silicon layer (20) on a portion of the semiconductor layer (11) defined by the discontinuity, a non-monocrystalline silicon layer (21) on the monocrystalline silicon layer (20), and a wiring layer (22) on the non-monocrystalline silicon layer (21).