发明名称 |
Apparatus and method for manufacturing an electronic device |
摘要 |
<p>An electronic device manufacturing apparatus includes: a reaction chamber including a wall having a ground potential level; a reaction gas inlet for introducing a reaction gas into the reaction chamber; a high frequency power generator for generating a high frequency voltage for exciting the reaction gas into plasma state or dissociated state; a cathode electrode connected to the high frequency power generator; and a floating capacitance formed between a potential level of the cathode electrode and the ground potential level. An impedance adjusting capacitor is inserted so as to be in series with the floating capacitance. The impedance adjusting capacitor has a capacitance value less than that of the floating capacitance. <IMAGE></p> |
申请公布号 |
EP0809274(A1) |
申请公布日期 |
1997.11.26 |
申请号 |
EP19970303336 |
申请日期 |
1997.05.16 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
SAKAI, OSAMU;NOMOTO, KATSUHIKO |
分类号 |
C23F4/00;H05H1/46;C23C16/50;C23C16/509;H01J37/32;H01L21/205;H01L21/302;H01L21/3065;H01L21/31;(IPC1-7):H01J37/32 |
主分类号 |
C23F4/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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