ALUMINIUM WIRING & FORMATION METHOD

摘要

An aluminum interconnection of the invention contains scandium as an impurity, so that the hardness of the interconnection is improved. Moreover, after a thin Al-Sc alloy film is formed, an annealing is performed so as to make the crystal grain larger than the width of the interconnection. The resulting Al interconnection has a high resistance against a stressmigration or electromigration, when a current stress is applied at a practical temperature in an LSI. This greatly contributes to the fabrication of a semiconductor device having a fine structure.