发明名称 Methods of forming two-sided HDMI interconnect structures
摘要 Methods of forming two-sided high density multilayer interconnect (HDMI) structures on a relatively large carrier and subsequently releasing and removing one or more structures to provide useable flexible interconnects or decals. In general, a carrier is provided and a release layer is formed on the carrier. Flexible high density multilayer interconnect structures are fabricated on the release layer. The release layer is processed to release and remove one or more flexible HDMI structures from the carrier. The carrier may be an ultraviolet transparent substrate, such as quartz, for example, and the release layer may be a polyimide layer. The HDMI structures are released by irradiating the release layer through the transparent carrier using ultraviolet radiation from an ultraviolet radiation source. Alternatively, a silicon carrier may be used that has a metal or silicon dioxide release layer formed thereon. The HDMI structures are released from the metal or silicon dioxide release layer by using wet etching procedures.
申请公布号 US5691245(A) 申请公布日期 1997.11.25
申请号 US19960738558 申请日期 1996.10.28
申请人 HE HOLDINGS, INC. 发明人 BAKHIT, GABRIEL G.;PILLAI, VINCENT A.;AVERKIOU, GEORGE;TRASK, PHILIP A.
分类号 H01L21/48;H01L21/68;H05K3/00;H05K3/46;(IPC1-7):H01L21/60 主分类号 H01L21/48
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