| 摘要 |
The static random access memory device has a memory cell array unit having a memory cell for storing data, a pair of bit lines connected to the memory cell to transmit the data, a word line connected to the memory cell, passing circuits which are controlled by the word line and connected between the memory cell and the bit lines, column selectors which are connected to the bit lines to control the connection to the data bus lines, precharging circuits for precharging the bit lines to a predetermined voltage level by a predetermined control signal to improve the data transmission speed, and clamp circuits which are connected to the data bus lines to clamp the precharge level of the bit lines; a column address decoding unit having a repair circuit for repairing weak column and a decoder for receiving a predecoded column address signal and a predetermined decoding control signal and generating a column address for controlling the pass circuit; and a decoding control signal generating unit for generating the decoding control signal in response to the state of an input pad the input signal of which is varied according to each operating state.
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