| 摘要 |
A process for growing single crystal epitaxial BaF2 layers on gallium arsenide substrates by slowly reacting Ba, BaCl2, Bal2, BaBr2, BaF2.BaCl2, BaF2.BaBr2, BaF2.BaI2, BaCl2.BaBr2, Ba3(GaF6)2, BAH2, or BaO2 vapor with a clean, hot GaAs substrate at 500 DEG C. to 700 DEG C. in high vacuum until a uniform, thin ( DIFFERENCE 12 ANGSTROM ) layer of reaction product is formed and then vapor depositing BaF2 onto the reaction layer at room temperature to 400 DEG C. to form the single crystal, epitaxial BaF2 layer.
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